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| TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N * SUITABLE FOR BROAD BAND APPLICATIONS * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2 * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 58W 65V 20V 2A -65 to 150C 200C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 01/01 D2004UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 10 40 20:1 65 Typ. Max. Unit V 0.4 1 7 mA mA V S dB % -- VGS(th) Gate Threshold Voltage * TOTAL DEVICE Common Source Power Gain Drain Efficiency VSWR Load Mismatch Tolerance h Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance PER SIDE VDS = 0V VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 24 12 1 pF pF pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 3.0C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 01/01 D2004UK 3RXW : *DLQ G% 3RXW : 'UDLQ(IILFLHQF\ I ,GT 9GV *+] $ 9 3LQ: 3RXW *DLQ I ,GT 9GV 3LQ: *+] $ 9 3RXW 'UDLQ(IILFLHQF\ Figure 1 Output Power and Gain vs. Input Power Figure 2 Output Power and Efficiency vs. Input Power. OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 1000MHZ ZS ZL W W 2.4 - j2.5 5 + j1 N.B. Impedances measured terminal to terminal. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 01/01 D2004UK 10 +28V G a te -B ia s 1K 2 100nF 1nF 1K 2 1K 2 L1 D 2004U K 36pF T3 T2 1 -8 p F T1 1 -8 p F 2 .2 p F 10pF 8 .2 p F 3 .6 p F T4 T5 T6 L2 T11 T12 T13 T14 36pF 1 -8 p F 36pF 36pF T7 T8 T9 T10 D 2004U K T15 T16 T17 T18 T19 1nF L3 100nF 100uF 1000MHz TEST FIXTURE Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 T2, T19 T3, T7 T4, T8 T5, T9 T6, T10 T11,T15 T12,T16 T13,T17 T14,T18 L1,L2 L3 23 mm 50mm 50 OHM UT 34 semi-rigid coax 6mm 8mm 15mm 9mm 8mm 7mm 11mm 5mm 6 turns of 24swg enamelled copper wire, 3mm i.d. 1.5 turns of 24swg enamelled copper wire on Siemens B62152-a7x 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 01/01 |
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